PhD/MPhil Electronic and Electrical Engineering

  1. Course Variations
    Nomenclature Duration Mode Of Attendance
    Ph.D. 3Yr FT
    Ph.D. 6Yr PT
    M.Phil. 2Yr FT
    M.Phil. 4Yr PT
  2. Typical offer:
    UK 2.1

Course Overview

PhD Electronic and Electrical Engineering

As a world-leader in the research areas of power semiconductor technology and devices, power electronics, nanotechnology and biometrics, and advanced numerical modelling of micro and nanoelectronic devices, Swansea University provides an excellent base for your research as a PhD or MPhil student in Electronic and Electrical Engineering.

Key Features

The Electronic Systems Design Centre (ESDC) is known for its ground-breaking research into Power IC technology, the key technology for more energy efficient electronics. The Centre is also a world-leader in semiconductor device modelling, FEM and compact modelling.

Within the Nanoelectronic Devices Computational Group, which forms part of the Electronic Systems Design Centre, we have the following projects (view under the Description tab below).



1) Parallel 3D Finite Element Monte Carlo Device Simulations Of Multigate Transistors

You will continue in the development of a 3D finite element Monte Carlo device simulator in order to investigate and optimise future multigate semiconductor transistors with the complex 3D geometries for the sub-22 nm technology. This 3D simulator can run in parallel utilising the message passing interface (MPI) standard library. You will continue in the incorporating quantum-mechanical corrections to account for a carrier confinement in the channel using a density gradient method.

Then, you will create unstructured meshes that will have mesh points at real atom positions in the crystal lattice of Si body and at the semiconductor-dielectric interface. Later, you extend the simulator by adapting high mobility materials like GaAs and InGaAs which are currently intensively researched for these novel device architectures.

2) Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors 

The aims of this PhD research will be i) to enable and to carry out multiscale modelling of the optimal metal-semiconductor interfaces, such that the Schottky barrier is minimal and ii) to analyse the role of interface defects, strain, and disorder on the carrier transport in nanoscale multi-gate transistors. The research will be closely coordinated within the EPSRC grant "Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors" in collaboration with Dr. Peter Sushko, University College London (UCL) and supported by IBM, TSMC, IMEC, and University of Glasgow. The PhD candidate will closely work with one post-doctoral researcher at Swansea and one post-doctoral researcher at UCL. He will help to bridge ab-initio modelling (DFT) across the metal-semiconductor interfaces using 3D transport Monte Carlo and Non-Equilibrium Green's Functions device simulations based on finite element mesh with atomistic resolution. The research in at forefront of the advanced modelling of access regions for a future 3D FinFET 22nm CMOS technology.

You should have an interest in physics, engineering, or computer science, with a particular interest in either atomistic scale semiconductor devices, or atomic scale material modelling, or high-performance computing, or computational modelling.

3) Novel GaN HEMT Switches for Power Management: Device Design, Optimization and Reliability Issues

Silicon based power devices’ technology is reaching its maturity and is not able to deliver a further significant improvement in power conversion. An essential technology booster is needed to satisfy the requirements for a high integration and a large power conversion in future electric and hybrid cars. The power switches allowing very high current and operating at large temperature are vital to keep control systems simple and efficient in a competitive electric car. The replacement by wide-bandgap III-Nitrides already demonstrating significant leaps in the performance of power devices is inevitable.

Aims and Objectives of the PhD Project are 1) to gain experimental data (I-V characteristics, C-V characteristics, breakdown voltage, pulse transient measurements) on a novel AlGaN/GaN HEMT technology by collaborating with Dr E. Wasige, School of Engineering, Glasgow University; 2) to investigate and optimise the device reliability focusing on the current collapse and the device degradation phenomena by comparing experimental measurements; and 3) to streamline device design, in order to achieve a large on-current density and a low off-current in the device, and to minimise the device degradation.

Entry Requirements

The entry requirements for the PhD or MPhil Electronic and Electrical Engineering is a first or upper second class honours degree in Electrical or Electronic Engineering or a similar relevant engineering or science discipline.

We welcome applications by prospective students from around the world and look for evidence of previous study that is equivalent to the entry requirements stated above. The Postgraduate Admissions Office are happy to advise you on whether your qualifications are suitable for entry to the course you would like to study. Please email for further information.

If English is not your first language you will need an acceptable pass in an approved English Language qualification to make sure you get the full benefit from studying at Swansea. We consider a wide range of qualifications, including the Swansea University English Test, the British Council IELTS test (with a score of at least 6.5 and 5.5 in each component). A full list of acceptable English Language tests can be found at:


Applicants to this programme would normally be expected to meet the minimum entry requirements indicated above. The College/School reserves the right to ask for higher academic grades and qualifications. Admissions decisions take into account not only prior academic qualifications, but also factors including the standard of the research synopsis/proposal submitted by the applicant, their performance at interview (if required), intensity of competition for limited places and relevant professional experience (where appropriate).

How To Apply

Informal enquires can be addressed to Dr Karol Kalna

Apply online and track your application status for the PhD or MPhil Electronic and Electrical Engineering at

If you're an international student, find out more about applying for the PhD or MPhil Electronic and Electrical Engineering

Tuition Fees

Annual tuition fees for entry in the academic year 2019/20 are as follows:

UK/EU International
Ph.D. Full-time £4,345 £19,550
Ph.D. Part-time £2,172.50 £9,800
M.Phil. Full-time £4,345 £19,550
M.Phil. Part-time £2,172.50 £9,800

Tuition fees for years of study after your first year are subject to an increase of 3%.

You can find further information on fees and how to pay on our tuition fees page.

Note: The UK/EU fee is indicative pending confirmation from UKRI

If your course starts in January, April or July 2019 please refer to the 2018/19 fee costs on our tuition fees page.

You may be eligible for funding to help support your study. To find out about scholarships, bursaries and other funding opportunities that are available please visit the University's scholarships and bursaries page.

International students and part-time study: It is now possible for some students to study part-time under the Tier 4 visa route. This is dependent on factors relating to the course and your individual situation. It may also be possible to study with us if you are already in the UK under a different visa category. Please visit the University information on Visas and Immigration for further guidance and support.

Current students: You can find further information of your fee costs on our tuition fees page.

Additional Costs

The tuition fees for the PhD or MPhil Electronic and Electrical Engineering do not cover costs incurred personally by the student such as the purchase of books or stationery, printing or photocopying costs.